Scanning type exposure apparatus and exposure method

ABSTRACT

In a scanning type exposure apparatus for exposing an entire surface of a pattern region on a mask to a substrate by scanning the mask and the substrate with respect to a projection optical system in a predetermined direction with a speed ratio in accordance with a magnification of the projection optical system, there are provided a plurality of illumination optical systems for illuminating respective areas of the pattern region on the mask with respective light fluxes from respective light source; a plurality of projection optical systems arranged so as to correspond to the respective illumination optical systems, the projection optical systems projecting respective images of the areas illuminated by the respective illumination optical systems onto respective projection areas on the substrate; a memory device for obtaining and storing a change of shape of the substrate; a magnification changing device for changing a magnification of at least one of the projection optical systems in accordance with the change of shape of the substrate; and an imaging position changing device for changing the position of said image projected via the at least one projection optical systems in accordance with the change in magnification.An exposure apparatus for exposing a pattern of a mask onto a substrate includes an image transfer system, an imaging characteristic adjusting mechanism and an exposure system. The image transfer system projects the pattern of the mask onto the substrate while moving the mask and the substrate synchronously during the projection of the pattern onto the substrate such that portions of the pattern overlap each other. The imaging characteristic adjusting mechanism is disposed in a space between the mask and the substrate, and adjusts imaging characteristics of a portion of the image transfer system that projects the pattern onto the substrate. The exposure system exposes the pattern during the synchronous movement of the mask and the substrate by the image transfer system.

This is a continuation of application Ser. No. 08/337,467, filed Nov. 8,1994, now abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a scanning type exposure apparatus andmore particularly to a scanning type exposure apparatus capable ofperforming preferable exposure to a substrate expanded and contracteddue to a previous exposure process.

2. Related Background Art

Recently, as display devices such as of personal computers, televisions,etc., liquid crystal display devices have been used widely. In such aliquid crystal display device, transparent thin film electrodes areformed on a glass plate in the photolithography in accordance with apredetermined pattern. For the photolithography, projection exposureapparatuses are used in which an original pattern formed on a mask isexposed on a photoresist layer on a glass substrate. There are variousstep-and-repeat type or mirror projection type exposure apparatuses.

Generally, in such projection exposure apparatuses, an original patternis exposed on a glass substrate repeatedly one over another for manylayers. As a result, the glass substrate is expanded and contracted dueto those exposure processes (heat) thereby to be deformed from theinitial state. In the conventional step-and-repeat type exposureapparatuses, only one projection optical system is provided, and theexpansion and contraction of a glass plate are corrected (magnificationcorrection) by changing the magnification of the projection opticalsystem and changing the stopped position of a substrate stage at thetime of each stepping operation thereby to change distances betweenadjacent transferred images. Also, in the mirror projection typeexposure apparatuses, the magnification in the scanning direction iscorrected by sequentially changing the relative position of an originalplate and a photosensitive substrate with respect to a projectionoptical system during scanning exposure while the magnification in thedirection perpendicular to the scanning direction is corrected bychanging the magnification of the projection optical system.

SUMMARY OF THE INVENTION

Recently, it is needed to form liquid crystal display substrates largein size and accordingly, it is desired to enlarge an exposure region ina projection exposure apparatus. For the enlargement of the exposureregion, it is considered to use an apparatus for performing scanningexposure by the use of a plurality of projection optical systems,instead of using conventional step-and-repeat exposure apparatuses andmirror projection scanning type exposure apparatuses. For example, aplurality of illumination optical systems are provided, and respectivelight fluxes emitted from the illumination optical systems illuminatedifferent areas on a mask and project images of the respective differentareas onto respective projection areas on a glass substrate via therespective projection optical systems. More specifically, a light fluxemitted from a light source is made uniform in its light quantity via anoptical system including a fly eye lens and the like, shaped by a fieldstop into a desired shape, and thereafter illuminate the pattern surfaceof the mask. A plurality of such illumination optical systems areprovided and light fluxes emitted from the respective illuminationoptical systems illuminate different small areas (illumination areas) onthe mask. The light fluxes transmitted through the mask form patternimages of the mask on respective different projection areas on the glasssubstrate via the respective projection optical systems. Then, byscanning the mask and glass substrate synchronously with respect to theprojection optical systems, the entire surface of the pattern region onthe mask is transferred to the glass substrate.

Thus, when the scanning type exposure apparatus is provided with theplurality of projection optical systems, the expansion and contractionof the substrate cannot be corrected by the above-mentioned conventionalmethod.

Therefore, it is an object of the present invention to provide ascanning type exposure apparatus capable of correcting the expansion andcontraction of a substrate preferably even though the apparatus isequipped with a plurality of projection optical systems.

For achieving the above object, according to the present invention, in ascanning type exposure apparatus having a plurality of illuminationoptical systems for shaping light fluxes from respective light sourceinto a predetermined shape with respective field stops and illuminatingrespective areas of a pattern region on a mask with the respective lightfluxes passed through the field stops and a plurality of projectionoptical systems disposed so as to correspond to the respectiveillumination optical systems, wherein respective images of the areas ofthe pattern region illuminated by the illumination optical systems areprojected via the respective projection optical systems onto projectionareas on a substrate and the entire surface of the pattern region isexposed by shifting the mask and the substrate in a predetermineddirection (X-direction) at a speed ratio in accordance with themagnification of the projection optical systems, there are providedmemory means for obtaining and storing a change of shape of thesubstrate; magnification changing means for changing the magnificationof at least one of the plurality of projection optical systems inaccordance with the change of shape; and imaging position changing meansfor changing the position of the image of the area projected by at leastone projection optical system.

Also, in accordance with, among the change of shape, a change in aperpendicular direction (Y-direction) to the predetermined direction,the magnification of the at least one projection optical system, and theposition of the image projected via the at least one projection opticalsystem in the perpendicular direction are changed, and in accordancewith, among the change of shape, a change in the shifting direction(X-direction), the position of the image of said at least one projectionoptical system in said scanning direction is changed.

Further, the exposure apparatus is provided with speed ratio changingmeans for changing the speed ratio of the mask to the substrate inaccordance with the change of shape of the substrate.

The plurality of projection optical systems are arranged such thatadjacent projection optical systems in a perpendicular direction(Y-direction) to the predetermined direction (X-direction) are displacedfrom each other in the predetermined direction to form a plurality ofrows in the perpendicular direction.

The imaging position changing means are a plurality of plane parallelglasses with the same thickness disposed in respective optical axes ofthe projection optical systems and the plane parallel glasses aredisplaced at respectively different angles with respect to therespective optical axes in accordance with the change of shape of thesubstrate.

The imaging position changing means may be a plurality of plane parallelglasses with different thickness disposed in respective optical axes ofthe projection optical systems and the plane parallel glasses aredisplaced at the same angle with respect to the respective optical axesin accordance with the change of shape of the substrate.

Also, the above substrate has a plurality of alignment marks arranged inthe vicinity of the projection areas along the predetermined direction(X-direction) and the scanning type exposure apparatus further areprovided with mark detecting means disposed with a predeterminedpositional relationship with respect to the projection optical systemsin a position capable of detecting at least a portion of the alignmentmarks so as to detect the alignment marks while the mask and thesubstrate are moved; and positioning means for correcting the positionof the mask or the substrate with respect to the projection opticalsystems in accordance with the detection result of the mark detectingmeans.

Also, the change of shape of the substrate is obtained in accordancewith positions of the alignment marks detected by the mark detectingmeans.

In a method of illuminating a plurality of areas on a pattern region ona mask with respective light fluxes from a plurality of illuminationoptical systems, projecting respective images of the illuminated areason projection areas on a substrate via a plurality of projection opticalsystems, and exposing the entire surface of the mask on the substrate byshifting the mask and the substrate with respect to the projectionoptical systems in a predetermined direction (X-direction) with a speedratio in accordance with the magnification of the projection opticalsystems, a change of shape of the substrate is obtained in advance, themagnification of at least one of the projection optical systems ischanged in accordance with the change of shape, and the position of theimage projected by the at least one projection optical system ischanged.

In this exposure method, the magnification of the at least oneprojection optical system, and the position of the image projected viathe at least one projection optical system in the perpendiculardirection are changed in accordance with, among the change of shape, achange in a perpendicular direction (Y-direction) to the predetermineddirection (X-direction), and the position of the image projected via theat least one projection optical system in the predetermined direction ischanged in accordance with, among the change of shape, a change in thepredetermined direction.

Further, in the exposure method, the speed ratio is changed inaccordance with the change of shape of the substrate.

According to the present invention, the magnification of the at leastone projection optical system is changed in accordance with the changeof shape of the substrate, and the position of the image projected viathe at least one projection optical system is changed, it is possible totransfer the mask pattern to the substrate with possible to transfer themask pattern to the substrate with its image corrected preferably withrespect to the change of shape of the substrate.

Also, the magnification of the at least one projection optical system,and the position of the image projected via the at least one projectionoptical system in the perpendicular direction are changed in accordancewith, among the change of shape, a change in the perpendicular directionto the predetermined direction, and the position of the image projectedvia the at least one projection optical system in the predetermineddirection is changed in accordance with, among the change of shape, achange in the predetermined direction. Therefore, the correction inaccordance with the change of shape of the substrate is possible.

Further, as the apparatus is provided with the speed ratio changingmeans for changing the speed ratio of the mask to the substrate inaccordance with the change of shape of the substrate, easy correctionwith respect to the change of shape of the substrate in thepredetermined direction is possible.

Since the plurality of projection optical systems are arranged such thatadjacent projection optical systems along a perpendicular direction tothe predetermined direction are displaced from each other in thepredetermined direction to form a plurality of rows in the perpendiculardirection, the correction of the change of shape of the substrateaccording to the above structure becomes effective.

Also, when the imaging position changing means are a plurality of planeparallel glasses with the same thickness disposed in respective opticalaxes of the projection optical systems and the plane parallel glassesare displaced at respectively different angles with respect to therespective optical axes in accordance with the change of shape of thesubstrate, the change of the position of the image becomes easy.

On the other hand, when the imaging position changing means are aplurality of plane parallel glasses with different thicknesses disposedin respective optical axes of the projection optical systems and theplane parallel glasses are displaced at the same angle with respect tothe respective optical axes in accordance with the change of shape ofthe substrate, the change of the position of the image becomes easy,too.

Further, the above substrate has the plurality of alignment marksarranged in the vicinity of the projection areas along the predetermineddirection and the scanning type exposure apparatus are provided with themark detecting means disposed with the predetermined positionalrelationship with respect to the projection optical systems in theposition capable of detecting at least a portion of the alignment marksso as to detect the alignment marks while the mask and the substrate aremoved; and the positioning means for correcting the position of the maskor the substrate with respect to the projection optical systems inaccordance with the detection result of the mark detecting means.Therefore, it is possible to obtain the change of shape of the substrateby the exposure apparatus.

Further, since the change of shape of the substrate is obtained inaccordance with positions of the alignment marks detected by the markdetecting means, the change of shape of the substrate can be obtainedeasily.

In the method of illuminating the plurality of areas on the patternregion on the mask with respective light fluxes from the plurality ofillumination optical systems, projecting respective images on theilluminated areas on the projection areas on the substrate via theplurality of projection optical systems, and exposing the entire surfaceof the mask on the substrate by shifting the mask and the substrate withrespect to the projection optical systems in the predetermined directionwith the speed ratio in accordance with the magnification of theprojection optical systems, the change of shape of the substrate isobtained in advance, the magnification of at least one of the projectionoptical systems is changed in accordance with the change of shape, andthe position of the image projected via the at least one projectionoptical system is changed. Therefore, it is possible to transfer themask pattern to the substrate with its image corrected preferably withrespect to the change of shape of the substrate.

Also, in this exposure method, the magnification of the at least oneprojection optical system, and the position of the image projected viathe at least one projection optical system in the perpendiculardirection are changed in accordance with, among the change of shape, achange in a perpendicular direction to the predetermined direction, andthe position of the image projected via the at least one projectionoptical system in the predetermined direction is changed in accordancewith, among the change of shape, a change in the predetermineddirection. Therefore, the correction with respect to the change of shapeof the substrate is possible.

Furthermore, in the exposure method, as the speed ratio is changed inaccordance with the change of shape of the substrate, the correctionwith respect to the change of shape of the substrate in thepredetermined direction is easy.

According to the present invention, as above, the magnification of atleast one of the projection optical system is changed in accordance withthe amount of expansion and contraction of the substrate, and theposition of the projected image is changed in accordance with the changeof magnification, so that it is possible to correct the projected imageof the mask pattern in accordance with the expansion and contraction ofthe substrate. Therefore, even though the image of the mask pattern isexposed repeatedly on the substrate one over another for a plurality oflayers, the exposed images on the substrate will not be deviated fromeach other.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram showing the structure of a scanning typeexposure apparatus according to an embodiment of the present invention;

FIG. 2 is a block diagram showing the structure of the control systemfor shifting optical axes of the projection optical systems in theapparatus of FIG. 1;

FIG. 3 shows the state of the projection areas projected on thephotosensitive substrate;

FIG. 4A shows the alignment marks formed on the photosensitivesubstrate;

FIG. 4B shows the shapes of the alignment marks;

FIG. 4C shows the beams for detecting the alignment marks;

FIG. 5A is a graph of a waveform obtained by the alignment sensor;

FIG. 5B is a graph of a waveform obtained by the alignment sensor;

FIG. 6 is an explanatory diagram showing the state of correcting theoptical axes in accordance with the expansion and contraction of thephotosensitive substrate according to the embodiment of the presentinvention;

FIG. 7 is a diagram for explaining a change of the positionalrelationship of images produced in accordance with the change ofmagnification of the projection optical systems;

FIG. 8 is a diagram showing the change of magnification and the changesof positions of images;

FIG. 9A shows a lattice-like pattern;

FIG. 9B shows deviations of images of the lattice-like pattern;

FIG. 10 shows a modification of the scanning type exposure apparatus ofthe present invention;

FIG. 11 shows another example of a magnification control device of theprojection optical system; and

FIG. 12 is a diagram for explaining the rotation of the plane parallelglass and the shift of an image.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 schematically shows the structure of a scanning type exposureapparatus according to an embodiment of the present invention. FIG. 2 isa block diagram showing the structure of a control system for shiftingimaging positions of projected images via projection optical systems ofthe exposure apparatus in FIG. 1. A light flux emitted from a lightsource such as an extra-high pressure mercury lamp is shaped into apredetermined shape by an illumination optical system 1a including a flyeye lens, an illumination field stop and the like and forms the image ofthe field stop on a pattern surface of a mask 2. In this apparatus, aplurality of illumination optical systems the same as the illuminationoptical system 1a are provided, and respective light fluxes emitted fromthe illumination optical system 1a to 1e illuminate small areas(illumination areas) M1 to M5 on the mask 2. The plurality of lightfluxes transmitted through the mask 2 form pattern images of theillumination areas M1 to M5 of the mask 2 on respective projection areasP1 to P5 on a photosensitive substrate 5 via the projection opticalsystems 3a to 3e. In this case, the projection optical systems 3a to 3eare one-to-one erecting systems. The respective projection opticalsystems 3a to 3e are provided with magnification control devices 10 forchanging magnifications of the projection optical systems by adjustingthe air pressure between optical elements of each projection opticalsystem. Further, plane parallel glasses 4a to 4e are disposed inrespective light paths between the projection optical systems 3a to 3eand the photosensitive substrate 5. The projection positions (projectionareas P1 to P5) of the pattern images on the photosensitive substrate 5are changed by changing angles of the respective plane parallel glasses4a to 4e with respect to optical axes AX1 to AX5 to shift the opticalaxes of the projection optical axes. The projection areas P1 to P5 onthe photosensitive substrate 5 are in a trapezoid shape. As shown inFIG. 3, adjacent projection areas (e.g., P1 and P2, P2 and P3) along ina Y-direction (nonscanning direction) are displaced in an X-direction(scanning direction) by a predetermined amount from each other, and endportions of adjacent projection areas (ranges indicated by broken lines)are overlapped in the Y-direction (i.e., two lows along theY-direction). Accordingly, the plurality of projection optical systems3a to 3e are displaced by a predetermined amount in the X-direction andoverlapped in the Y-direction in accordance with the arrangement of theprojection areas P1 to P5. The plurality of the illumination opticalsystems 1a to 1e are arranged such that the arrangement of theillumination areas on the mask 2 becomes the same as that of theprojection areas P1 to P5. The whole surface of a pattern region 2a onthe mask 2 is transferred onto an exposure region 5a on thephotosensitive substrate 5 by scanning the mask 2 and the photosensitivesubstrate 5 synchronously in the X-direction with respect to theprojection optical systems 3a to 3e.

The photosensitive substrate 5 is disposed on a substrate stage 6. Thesubstrate stage 6 is provided with a drive device 7 having a long strokein the scanning direction for performing one-dimensional scanningexposure, and a drive device 8 having a short stroke for moving thestage 6 slightly in the Y-direction. Further, the substrate stage 6 isprovided with a position measuring device (e.g., laser interferometer) 9for detecting the position of the substrate stage in the scanningdirection with high resolving power and high precision.

The mask 2 is supported by a mask stage (not shown). Similarly, the maskstage is provided with a drive device having a long stroke in thescanning direction, a drive device having a short stroke in thedirection perpendicular to the scanning direction, and a positionmeasuring device for detecting the position of the mask stage in thescanning direction. Further, at least one of the substrate stage and themask stage has a rotating mechanism for correcting the rotation of themask or the photosensitive substrate.

The mask 2 and the photosensitive substrate 5 (or the mask stage and thesubstrate stage 6) may be supported together by a carriage as shown inFIG. 10.

Alignment marks D are formed on the respective photosensitive substrate5 and the mask 2. Alignment sensors PM, MM are provided in predeterminedpositions with respect to the exposure apparatus so as to detect thosealignment marks D. It is necessary to provide at least two alignmentsensors PM and at least two alignment sensors MM, and the positions ofthe marks are detected by signal processing devices (not shown). Asshown in FIG. 4, the alignment mark D is constituted by marks Dy₁, Dy₂(represented by the marks Dy) formed in the vicinity of the transferregion 5a of the photosensitive substrate or the pattern region 2a ofthe mask 2 approximately successively along the scanning direction, andmarks Dx₁₁, Dx₁₂, Dx₂₁, Dx₂₂ (represented by the mark Dx) formed atlateral ends of the marks Dy₁, Dy₂ so as to be spaced away for apredetermined distance from each other in the Y-direction. Also, thealignment marks D are a set of grating-like marks, as shown in FIG. 4C.Laser beams are emitted to the marks D and the positions of the marks Dwith respect to the sensors PM, MM are obtained by detecting diffractedlight of each laser beam.

Laser beams emitted to the marks D are in the shape of a slit, as shownin FIG. 4B. A laser beam Bx detects the mark Dx while a laser beam Bydetects the mark Dy. The laser beam By is vibrated with a constantamplitude and a constant frequency as indicated by broken lines. Thediffracted light produced from the mark D due to each beam Bx, By isdetected via slits of the respective alignment sensors PM, MM bydetectors and converted to electric signals.

The signal of the mark Dx due to the beam Bx becomes a waveform in FIG.5A indicating the change in signal intensity in accordance with theX-coordinate detected by the position measuring device 9, and the centerposition of the mark Dx can be detected with the x-coordinate byperforming a predetermined algorithm process. The signal of the mask Dydue to the beam By can be obtained as the change in signal intensitywith respect to the deviation of the position in the Y-direction asshown in FIG. 5B by detecting, on the same frequency as the vibration,the phase of the signal intensity obtained by the vibration of the beamand changed with time. By subjecting the change in signal intensity toan AGC process before the phase detection, a constant intensitydistribution is obtained in accordance with the deviation of theposition in the Y-direction in spite of the magnitude of the intensityof the original signal.

The alignments of the photosensitive substrate 5 and the mask 2 areperformed by the use of the above-structured alignment marks and thealignment sensors in accordance with the following procedure. Thefollowing description is directed to the alignment of the photosensitivesubstrate but the alignment of the mask is performed in the same manner.

1) The photosensitive substrate 5 is placed on the stage 6, and thestage 6 is moved such that the marks Dx₁₁, Dx₁₂ are positioned withinrespective detecting ranges of the two alignment sensors PM.

2) The positions of the marks Dx₁₁, Dx₁₂ in the X-direction are measuredby scanning the marks and beams relatively.

3) The stage 6 is moved until the marks Dx₂₁, Dx₂₂ are positioned withindetecting ranges of the alignment sensors PM. Then, the positions of themarks Dx₂₁, Dx₂₂ in the X-direction are detected.

As a result, the average value of the differences (Dx₁₁-Dx₂₁) and(Dx₁₂-Dx₂₂) of the respective positions becomes the amount of expansionand contraction of the photosensitive substrate in the X-direction. And,the average value of the differences (Dx₁₁-Dx₁₂) and (Dx₂₁-Dx₂₂) becomesthe amount of rotation of the substrate around the optical axes.

4) The stage is rotated in accordance with the measured amount ofrotation to correct the rotation of the substrate. For this, both thesubstrate stage and the mask stage may be rotated to correct therelative amount of rotation between the photosensitive substrate and themask. In this case, there is no need to provide a rotating mechanism toone of the stages.

5) After the rotation correction, the positions of the marks are againmeasured to check the rotation and the position of the photosensitivesubstrate in the X-direction with respect to the mask is obtained.

6) While the marks Dy are detected by the alignment sensors, the stage 6is moved in the X-direction. Regarding the mark Dy, a signal as shown inFIG. 5B is obtained. Therefore, the position of the stage 6 in theY-direction is controlled by the drive device 8 such that the averagevalue of the respective signals of the marks Dy₁, Dy₂ becomes zero.

The amount of expansion and contraction of the photosensitive substratein the Y-direction due to its position in the X-direction can beobtained continuously by converting the difference between the detectionsignals of the mark Dy₁, Dy₂ to the distance in the Y-direction. Theexpansion and contraction of the photosensitive substrate in theX-direction can be corrected by changing the speed of moving thephotosensitive substrate with respect to the design value based on thevalues obtained in the above processes 2) and 3). In this case, themarks Dx are formed only on both ends of the photosensitive substrate,so that it is impossible to correct the expansion and contraction inaccordance with various positions in the X-direction. However, if thenumber of the measuring points is increased by forming marks Dx on threeor more points and the amount of expansion and contraction of eachposition between the measuring points is measured, approximatelycontinuous correction can be realized.

The amounts of expansion and contraction obtained as above are stored inthe memory of a control device 11 in FIG. 2. Then, when performingexposure to the photosensitive substrate 5, the control device 11changes magnifications of the projection optical systems 3a to 3e bymeans of the magnification control device 10 based on the amounts ofexpansion and contraction stored in the memory and sends instructions toa drive device 12 to drive the plane parallel glasses 4a to 4e to shiftthe optical axes. This operation is necessary for the reason that sincethe positional relationship between the overlapped portions of theprojection area s as indicated by the broken lines in FIG. 3 is changeddue to the changes of magnifications and the amount of exposure to thephotosensitive substrate becomes uneven, the positional relationshipbetween the projection areas is returned to the initial condition. Thechange in positional relationship between the plurality of projectionareas when the magnifications of the projection optical systems arechanged will be described with reference to FIGS. 7, 9A and 9B.

In FIG. 7, areas indicated by two-dot-chain lines represent theprojection area P1 to P5 when the magnifications of the projectionoptical systems 3a to 3e is in the initial condition while areasindicated by solid lines represent projection areas when themagnifications of the projection optical systems are changed. For thesimplicity of the description, the shape of the projection areas is maderectangular differently from that of the projection areas P1 to P5 inFIG. 1. At the time of the initial magnifications, the length of theprojection areas in the Y-direction is L, the length thereof in theX-direction is W, the distance between the centers of the projectionareas in the Y-direction (e.g., P1 to P2) is P, and the distance betweenthe centers thereof in the X-direction is B. In this case, there is nounnecessary overlap η in the Y-direction, and the positionalrelationship between the projection areas in the X-direction is set tobe in a predetermined condition. Therefore, a lattice-like pattern asshown in FIG. 9A is transferred properly.

On the other hand, when each magnification of the projection opticalsystems is changed by the M times, the length of the projection areas inthe Y-direction is L×M, and the length thereof in the X-direction isW×H. However, the distances between the centers of the projection areasare kept to be P and B. Accordingly, the positional relationship betweenthe projection areas is changed (e.g., the distance between sideschanges from “b” to “Mb−κ” or “b−(M−1) W”) and the overlap η and thedeviation K expressed by the following expressions are producedrespectively in the Y- and X-directions: $\begin{matrix}\begin{matrix}{\eta = \quad {{M \times L} - L}} \\{= \quad {\left( {M - 1} \right) \times L}}\end{matrix} & (1) \\\begin{matrix}{\kappa = \quad {{M \times B} - B}} \\{= \quad {\left( {M - 1} \right) \times {B.}}}\end{matrix} & (2)\end{matrix}$

Therefore, the lattice-like pattern in FIG. 9A is transferred as animage including the overlaps η and the deviations κ as shown in FIG. 9B.

Then, in order to correct the overlaps and the deviations, the distancesbetween the projection areas are changed in accordance with the changeof magnification of the projection optical systems. Basically, thiscorrection is carried out such that the dimensions of the projectionareas and the distances between the projection areas are made similarbefore and after the correction. In connection with this correction, thecorrection of imaging positions of the projection areas will bedescribed with reference to FIGS. 2, 6 and 12.

FIG. 6 shows the state of correcting the positions of the optical axesin accordance with the expansion and contraction of the photosensitivesubstrate according to this embodiment of the present invention. Thesame members and parts as those in FIG. 1 are designated by the samereference numerals. The thicknesses of the plane parallel glasses 4a to4e are approximately identical and the amount of shift for each opticalaxes AX1 to AX5 at the same angle of rotation is the same. Also, whenthe angles of rotations of the plane parallel glasses are zero, thepositions of the optical axes AX1 to AX5 projected on the photosensitivesubstrate 5 are α, β, γ, δ, ε. These positions α, β, γ, δ, ε can beconsidered as the positions of the patterns formed prior to theexpansion and contraction of the photosensitive substrate.

Now, for example, the photosensitive substrate 5 is considered to beextended uniformly in the Y-direction by Δp (ppm). In this case, themagnifications of the projection optical systems are changed and theoptical axes are shifted in accordance with the changes ofmagnifications as follows. As the photosensitive substrate is extendeduniformly, the displacement of each position thereof is proportional tothe distance from the center of the photosensitive substrate. Therefore,the amount of shift for each optical axis is proportional to thedistance from the center of the photosensitive substrate. That is, ifthe distances between the positions α, β, γ, δ, ε are l, thedisplacement of each position |α′-α|, |β′-β|, |γ′-γ|, |δ-δ′|, |ε-ε′|becomes 2Δ1, Δ1, 0, Δ1, 21Δ1 respectively. Also, Δ1=1×Δp/10⁶.

When exposing a pattern again on the pattern formed on the extendedphotosensitive substrate 5, each magnification of the projection opticalsystems 3a to 3e is enlarged by Δp (ppm). Thereby, the amount of shiftfor each optical axis AX1, AX5 is:

2Δ1=21×Δp/10⁶   (3)

And, the amount of shift for each optical axis AX2, AX4 is:

ΔI=1×Δp/10⁶   (4)

When the angle of rotation of the plane parallel glass (fine angle) is θ(rad), the thickness thereof is t(mm), and the refractive index thereofis n, the amount Δ1(mm) of shift due to the rotation of the planeparallel glass is approximated as follows:

Δ1≈(1—1/n)tθ  (5)

Therefore, θ becomes: $\begin{matrix}{\theta = {l \cdot {\Delta p} \cdot \frac{n}{\left( {n - 1} \right)e} \cdot 10^{- 4}}} & (6)\end{matrix}$

Then, by rotating the plane parallel glasses 4a to 4e at the respectiveangles of rotations 2θ, θ, 0, −θ, −2θ (the direction R in the drawing ismade positive), the projection positions of the optical axes AX1 to AX5are made to coincide with the positions α′, β′, γ′, δ′, ε′. Thereby, thecorrection of the projected image in accordance with the extension ofthe photosensitive substrate in the Y-direction (the correction of theimaging positions) can be performed.

Also, for example, as shown in FIG. 12, if the plane parallel glass hasthe thickness t=3 (mm) and the refractive index n=1.74, and when theplane parallel glass is inclined at the angle θ=1.0 (mrad), the opticalaxis AX is shifted by Δ1=1.3 (μm). And, if the magnification ofprojection optical system is 1:1, the imaging position on thephotosensitive substrate is shifted by 1.3 (μm).

Then, as shown in FIG. 2, the control device 11 rotates the planeparallel glasses 4a to 4e by the drive device 12 based on the amount Δ1of shift to change imaging positions.

When the expansion and contraction of the photosensitive substrate arenot uniform with respect to its center in the Y-direction, i.e., whennonlinear expansion and contraction are produced in the photosensitivesubstrate, the deviation of each position on the photosensitivesubstrate is calculated and stored in the memory. For example, thepositions of arbitrarily chosen patterns formed on the photosensitivesubstrate 5 are obtained by the use of another position detecting deviceand the deviations of the positions of those patterns from therespective design positions are obtained. Then, the expansion andcontraction of each of those positions on the photosensitive substrateare obtained and stored in the memory of the control device 11. Whenperforming exposure, the magnifications of the respective projectionoptical systems 3a to 3e are changed in accordance with the amounts ofexpansion and contraction and the plane parallel glasses 4a to 4e arerotated at respective angles of rotation in accordance with the changesof magnifications (the amounts of expansion and contraction). Also, whencorrecting the expansion and contraction of each arbitrarily chosenposition on the photosensitive substrate in the X-direction, themagnifications of the projection optical systems and the angles ofrotations of the plane parallel glasses are controlled continuouslyduring scanning exposure. However, when the controls of themagnifications and the angles of rotations do not follow the scanningspeed of the photosensitive, the amounts of expansion and contraction ofthe photosensitive substrate are averaged in the X-direction, and themagnifications and angles of rotations are controlled based on theaveraged amount of expansion and contraction.

In the above embodiment, the thicknesses of the plane parallel glassesare approximately the same, but may be differentiated when the expansionand contraction of the photosensitive substrate are uniform with respectto its center. That is, as known from the expression (5), the amount ofshift is proportional to the thickness of the glass. Therefore, if thethickness of the plane parallel glasses 4b, 4d is set to t and thethickness of the plane parallel glasses 4a, 4e is set to 2t, the anglesof rotations of the plane parallel glasses 4a to 4e become the same.Therefore, the structure of the drive device 12 for driving the planeparallel glasses is simplified.

In the above embodiment, although the change of magnification is uniformin both X- and Y-directions, there is a case that the expansion andcontraction of the photosensitive substrate are different depending onthe directions. In this case, as shown in FIG. 8, magnifications in theX- and Y-directions are changed by M₁ and M₂ times respectively. Thiscan be performed by changing the magnifications of the projectionoptical systems 3a to 3e and correcting the relative 10 speed of themask 2 and the photosensitive substrate 5 in during scanning exposure inthe X-direction. Namely, for example, each magnification of theprojection optical systems 3a to 3e is changed by M₁ times. And,regarding the difference between M₁ and M₂, the speed of at least one ofthe mask and the photosensitive substrate is decelerated or acceleratedas the difference between the speeds of the mask and the photosensitivesubstrate.

FIG. 10 shows a modification of the scanning type exposure apparatus ofthe present invention. The same members and parts as those in theapparatus in FIG. 1 are designated by the same reference numerals. Thepoints different from the apparatus in FIG. 1 are as follows. Namely,the apparatus in FIG. 10 has a carriage 17 capable of scanning andmoving the mask 2 and the photosensitive substrate 5 together. Also, themask 2 is disposed on a mask stage 13, and the mask stage 13 is drivenby drive devices 14, 15, 16 such as motors in the X- and Y-directionsand the direction of rotation (θ-direction) with respect to the opticalaxes of the illumination optical systems thereby to control thepositions of the mask 2 in the X-, Y- and θ-directions. The positions ofthe mask stage 13 and the carriage 17 in the X-direction are detectedrespectively by measuring devices 18 and 19 such as laser interferencemeasuring devices.

The projection optical systems 3a to 3e are provided with respectivemagnification control devices 20 therein. As shown in FIG. 11, eachmagnification control device 20 is constituted by two plano-concave lens30a and 30b having comparatively large radii of curvature and a biconvexlens 30. The image height is changed by shifting the biconvex lens 30cin the direction of the optical axis AX. For example, when lenses withthe radius of curvature R=5000 (mm) and the refractive index n=1.74 arecombined and the bioconvex lens is shifted by ±68 (μm), themagnification adjustment (image height adjustment) of ±20 ppm becomespossible.

The mask 2 is provided with alignment marks MA1 to MA3 and thephotosensitive substrate 5 is provided with alignment marks PA1 to PA3.The positions of the alignment marks MA1 to MA3 and PA1 to PA3 aredetected by alignment sensors A1 and A2 disposed above the mask 2. Thealignment sensors A1 and A2 are provided to detect the alignment marksPA1 to PA3 via the mask 2 and two lateral end side projection opticalsystems 3a and 3e and can detect the relative positional relationshipbetween the mask 2 and the photosensitive substrate 5. The positionaldeviations between the mask 2 and the photosensitive substrate 5 in theX- and Y-directions and the direction of rotation (θ-direction) areobtained based on the detected relative positional relationship and thealignment of the mask 2 and the photosensitive substrate 5 is performedby the drive devices 14 to 16.

The magnification error (expansion and contraction of the photosensitivesubstrate) of the photosensitive substrate 5 with respect to the mask 2is detected by the alignment sensors A1 and A2. For example, thepositions of two sets of alignment marks MA1 and PA1, MA2 and PA2 aredetected. Then, from the ratio of the distance between the marks PA1 andPA2 to the distance between the marks MA1 and MA2, a magnification isobtained. That is, as shown in FIG. 10, the magnification (M₁) in theY-direction is obtained by detecting two sets of alignment marks MA1 andPA1, MA2 and PA2 or more arranged along Y-direction, and themagnification (M₂) in the X-direction is obtained by detecting two setsof alignment marks MA2 and PA2, MA3 and PA3 or more.

Then, based on the obtained magnifications, the imaging position of theprojection area defined by each projection optical system is correctedby M₁ times in the Y-direction and by M₂ times in the X-direction, andthe plane parallel glasses 4a to 4e are rotated.

When performing exposure by scanning the carriage 17 after the imagingpositions of the projection areas have been changed, the drive devices14 to 16 are driven to move the mask stage 13, and the scanning exposureis performed such that the difference of the speeds of the mask and thephotosensitive substrate with respect to the projection optical systemsbecomes V×(M₂−1). This case is the same as the above case in which theamount of expansion and contraction of the substrate in the X-directionis different from that of the substrate in the Y-direction.

The differences between the structures of the apparatuses in FIGS. 1 and10 are replaceable mutually.

In the above embodiment, the plurality of illumination optical systemsemit respective light fluxes to the plurality of projection opticalsystems, but a light flux from one illumination optical system may bedivided into a plurality of light fluxes to be emitted to the respectiveprojection optical systems.

Also, the respective alignment sensors detect diffracted light from thealignment marks, but may detect directly reflected light from alignmentmarks. In this case, the alignment marks may be continuous bar marksinstead of the grating-like marks. In particular, the mark Dx may be agroup of bar marks arranged in close proximity.

Also, in the apparatus in FIG. 1, instead of vibrating theabove-mentioned beam By, the slit in the alignment sensor may bevibrated. Further, although the laser beams Bx and By shown in FIG. 4Care separated from each other, they may be integrated to be across-shaped beam if they can be separated by a light-receiving system.

Further, the measurement in the Y-direction is performed by detectingthe phase of the waveform obtained from the vibrating beam in the aboveembodiment. However, there is another method in which the beam is notvibrated but fixed and the diffracted light or the directly reflectedlight from the mark is received by a sensor having two sensor divisionsto obtain the signal intensity ratio of both sensor divisionselectrically thereby to obtain the position information shown in FIG.5B. If the electric signal intensities of the two sensor divisions are Aand B, the ratio of (A−B)/(A+B) is obtained and the obtainment ofposition information does not depend on the signal intensity.

Furthermore, in the present embodiment, there is no specific limitationon the distance between the two marks Dy formed on the mask and thedistance between the two marks Dy formed on the photosensitivesubstrate, but if both distances are made equal, the alignment marks ofthe mask are transferred to the photosensitive substrate in the exposureof the first layer and the transferred alignment marks can be used forthe second and later layers on the photosensitive substrate. In thiscase, when the exposure for the third or more layers are required, it ispreferable to provide a shutter in a position conjugate to the fieldstop in order to prevent the transfer of the alignment marks of the maskin the second and later exposures.

What is claimed is:
 1. A scanning type exposure apparatus for exposing apattern region on a mask to a substrate by scanning said mask and saidsubstrate with respect to a plurality of projection optical systems in apredetermined direction with a speed ratio in accordance with amagnification of said projection optical system, comprising: a pluralityof illumination optical systems for illuminating respective areas ofsaid pattern region on said mask with respective light fluxes; saidplurality of projection optical systems being arranged so as tocorrespond to said respective illumination optical systems, saidprojection optical systems projecting respective images of said areasilluminated by said respective illumination optical system ontorespective projection areas on said substrate; a magnification changingdevice for detecting a change of shape of said substrate and changing amagnification of at lest one of said projection optical systems inaccordance with the change of shape of said substrate; and an imagingposition changing device for changing the position of an image projectedvia said at least one projection optical system in accordance with saidchange in magnification.
 2. A scanning type exposure apparatus accordingto claim 1, further comprising a control device for changing, inaccordance with, among said change of shape, a change in a directionperpendicular to said predetermined direction, the magnification of saidat least one projection optical system, and the position of said imageprojected via said at least one projection optical system in saidperpendicular direction, and changing the position of said image of saidat least one projection optical system in said scanning direction inaccordance with, among said change of shape, a change in said scanningdirection.
 3. A scanning type exposure apparatus according to claim 1,further comprising a speed ratio changing means device for changing saidspeed ratio in accordance with the change of shape of said substrate. 4.A scanning type exposure apparatus according to claim 1, wherein saidplurality of projection optical systems are arranged such that adjacentprojection optical systems in a direction perpendicular to saidpredetermined direction are displaced from each other in saidpredetermined direction to form a plurality of rows in saidperpendicular direction.
 5. A scanning type exposure apparatus accordingto claim 1, wherein said imaging position changing device comprises aplurality of plane parallel glasses with the same thickness disposed inrespective optical axes of said projection optical systems and saidplane parallel glasses are displaced at respectively different angleswith respect to said respective optical axes in accordance with thechange of shape of said substrate.
 6. A scanning type exposure apparatusaccording to claim 1, wherein said imaging position changing devicecomprises a plurality of plane parallel glasses with differentthicknesses disposed in respective optical axes of said projectionoptical systems and said plane parallel glasses are displaced at thesame angle with respect to said respective optical axes in accordancewith the change of shape of said substrate.
 7. A scanning type exposureapparatus according to claim 1, wherein said substrate has a pluralityof alignment marks arranged in the vicinity of said projection areasalong said predetermined direction, said apparatus further comprising amark detecting device disposed with a predetermined positionalrelationship with respect to said projection optical systems in aposition capable of detecting at least a portion of said alignment marksso as to detect said alignment marks while said mask and said substrateare moved; and a positioning device for correcting the position of saidmask or said substrate with respect to said projection optical systemsin accordance with the detection result of said mark detecting device.8. A scanning type exposure apparatus according to claim 7, wherein thechange of shape of said substrate is obtained in accordance withpositions of said alignment marks detected by said mark detectingdevice.
 9. A scanning type exposure apparatus according to claim 1,wherein said projection optical systems are a magnification-erectiontype.
 10. A scanning type exposure apparatus according to claim 1,further comprising a holding member for holding said mask and saidphotosensitive substrate together.
 11. A method of exposing a patternimage of a mask to a substrate via a plurality of projection opticalsystems, comprising the steps of: detecting a change of shape of saidsubstrate; changing a magnification of at least one of said projectionoptical systems in accordance with the change of shape of saidsubstrate; and changing the position of an image projected via said atleast one projection optical system in accordance with the change ofmagnification of said at least one projection optical system.
 12. Amethod according to claim 11, further comprising the steps of changing,in accordance with, among said change of shape, a change in a directionperpendicular to said predetermined direction, the magnification of saidat least one projection optical system, and the position of said imageprojected via said at least one projection optical system in saidperpendicular direction; and changing the position of said imageprojected via said at least one projection optical system in saidpredetermined direction in accordance with, among said change of shape,a change in said predetermined direction.
 13. A method according toclaim 11, further comprising the step of changing said speed ratio inaccordance with the change of shape of said substrate.
 14. A scanningtype exposure apparatus comprising: a plurality of projection opticalsystems for respectively projecting a pattern image of a mask onto asubstrate; a moving device for moving said mask and said substraterelative to said projection optical systems, while holding said mask andsaid substrate together; and an adjusting device for detecting a changeof shape of said substrate, and for adjusting at least one imagingcharacteristic of said projection optical systems.
 15. An exposureapparatus for exposing a pattern of a mask onto a substrate, comprising:an image transfer system that projects the pattern of the mask onto thesubstrate while moving the mask and the substrate synchronously duringthe projection of the pattern onto the substrate such that portions ofthe pattern overlap each other; an imaging characteristic adjustingmechanism disposed in a space between the mask and the substrate, toadjust imaging characteristics of a portion of the image transfer systemthat projects the pattern onto the substrate; and an exposure systemthat exposes the pattern during the synchronous movement of the mask andthe substrate by the image transfer system.
 16. The exposure apparatusaccording to claim 15, wherein the imaging characteristic adjustingmechanism includes an optical member.
 17. The exposure apparatusaccording to claim 15, wherein the exposure apparatus includes aplurality of projection optical systems.
 18. The exposure apparatusaccording to claim 17, wherein the exposure apparatus includes five ofthe projection optical systems.
 19. The exposure apparatus according toclaim 15, wherein a magnification of the portion of the image transfersystem that projects the pattern onto the substrate is substantiallyequal to one.
 20. The exposure apparatus according to claim 15, whereina projection area of the portion of the image transfer system thatprojects the pattern onto the substrate has a trapezoidal shape.
 21. Theexposure apparatus according to claim 15, wherein a projection area ofthe portion of the image transfer system that projects the pattern ontothe substrate has a polygonal shape.
 22. The exposure apparatusaccording to claim 15, wherein the imaging characteristic adjustingmechanism includes a light transmissive optical member.
 23. The exposureapparatus according to claim 15, wherein the imaging characteristicadjusting mechanism adjusts a magnification of the portion of the imagetransfer system that projects the pattern onto the substrate.
 24. Theexposure apparatus according to claim 15, wherein the imagingcharacteristic adjusting mechanism adjusts a size of the pattern formedon the substrate by the portion of the image transfer system thatprojects the pattern onto the substrate.
 25. The exposure apparatusaccording to claim 15, wherein the imaging characteristic adjustingmechanism adjusts a location where the pattern is formed on thesubstrate by the portion of the image transfer system that projects thepattern onto the substrate.
 26. A scanning exposure apparatuscomprising: an image transfer system that projects a pattern on a maskonto a substrate while moving the mask and the substrate synchronouslyduring the projection of the pattern onto the substrate; and an imagingcharacteristic adjusting mechanism that adjusts imaging characteristicsof a portion of the image transfer system that projects the pattern ofthe mask onto the substrate, the imaging characteristic adjustingmechanism disposed in a space that includes the substrate and theportion of the image transfer system that projects the pattern onto thesubstrate; the image transfer system performing a transfer of thepattern on the mask onto the substrate by overlapping transfer of thepattern onto the substrate.
 27. The scanning exposure apparatusaccording to claim 26, wherein the imaging characteristic adjustingmechanism includes an optical member.
 28. The scanning exposureapparatus according to claim 26, wherein the image transfer systemincludes a plurality of projection optical systems.
 29. The scanningexposure apparatus according to claim 28, wherein the image transfersystem includes five of the projection optical systems.
 30. The scanningexposure apparatus according to claim 26, wherein a magnification of theportion of the image transfer system that projects the pattern onto thesubstrate is substantially equal to one.
 31. The scanning exposureapparatus according to claim 26, wherein a projection area of theportion of the image transfer system that projects the pattern onto thesubstrate has a trapezoidal shape.
 32. The scanning exposure apparatusaccording to claim 26, wherein a projection area of the portion of theimage transfer system that projects the pattern onto the substrate has apolygonal shape.
 33. The scanning exposure apparatus according to claim26, wherein the imaging characteristic adjusting mechanism includes alight transmissive optical member.
 34. The scanning exposure apparatusaccording to claim 26, wherein the imaging characteristic adjustingmechanism adjusts a magnification of the portion of the image transfersystem that projects the pattern onto the substrate.
 35. The scanningexposure apparatus according to claim 26, wherein the imagingcharacteristic adjusting mechanism adjusts a size of the pattern formedon the substrate by the portion of the image transfer system thatprojects the pattern onto the substrate.
 36. The scanning exposureapparatus according to claim 26, wherein the imaging characteristicadjusting mechanism adjusts a location where the pattern is formed onthe substrate by the portion of the image transfer system that projectsthe pattern onto the substrate.
 37. A method of performing exposure withan exposure apparatus, comprising the steps of: utilizing an imagetransfer system to project an image of a pattern on a mask onto asubstrate to form the pattern onto the substrate while moving the maskand the substrate synchronously such that portions of the patternoverlap each other on the substrate; and adjusting at least one imagingcharacteristic of a portion of the image transfer system located betweenthe mask and the substrate, the adjusting being accomplished by using animaging characteristic adjusting mechanism disposed in a space betweenthe substrate and the portion of the image transfer system that projectsthe pattern onto the substrate.
 38. The method according to claim 37,wherein the imaging characteristic adjusting mechanism includes anoptical member.
 39. The method according to claim 37, wherein the imagetransfer system includes a plurality of projection optical systems, andthe adjusting step is performed with respect to at least one of theplurality of projection optical systems.
 40. The method according toclaim 39, wherein there are five of the projection optical systems. 41.The method according to claim 37, wherein a magnification of the portionof the image transfer system that projects the pattern onto thesubstrate is substantially equal to one.
 42. The method according toclaim 37, wherein a projection area of the portion of the image transfersystem that projects the pattern onto the substrate has a trapezoidalshape.
 43. The method according to claim 37, wherein a projection areaof the portion of the image transfer system that projects the patternonto the substrate has a polygonal shape.
 44. The method according toclaim 37, wherein the imaging characteristic adjusting mechanismincludes a light transmissive optical member.
 45. The method accordingto claim 39, wherein the adjusting step adjusts a magnification of theportion of the image transfer system that projects the pattern onto thesubstrate.
 46. The method according to claim 37, wherein the adjustingstep adjusts a size of the pattern formed on the substrate by theportion of the image transfer system that projects the pattern onto thesubstrate.
 47. The method according to claim 37, wherein the adjustingstep adjusts a location where the pattern is formed on the substrate bythe portion of the image transfer system that projects the pattern ontothe substrate.
 48. A substrate on which an image has been exposedutilizing the method of claim
 37. 49. A method of performing exposurewith a scanning exposure apparatus, comprising the steps of: utilizingan image transfer system to project an image of a pattern on a mask ontoa substrate to form the pattern onto the substrate while moving the maskand the substrate synchronously; and adjusting at least one imagingcharacteristic of a portion of the image transfer system that projectsthe pattern onto the substrate, the adjusting being accomplished byusing an imaging characteristic adjusting mechanism disposed in a spacethat includes the substrate and the portion of the image transfer systemthat projects the pattern onto the substrate; wherein the imagingtransfer system transfers the pattern on the mask onto the substrate byoverlapping transfer of the pattern onto the substrate.
 50. The methodaccording to claim 49, wherein the imaging characteristic adjustingmechanism includes an optical member.
 51. The method according to claim49, wherein the image transfer system includes a plurality of projectionoptical systems, the adjusting step being performed on at least one ofthe plurality of projection optical systems.
 52. The method according toclaim 51, wherein there are five of the projection optical systems. 53.The method according to claim 49, wherein a magnification of the portionof the image transfer system that projects the pattern onto thesubstrate is substantially equal to one.
 54. The method according toclaim 49, wherein a projection area of the portion of the image transfersystem that projects the pattern onto the substrate has a trapezoidalshape.
 55. The method according to claim 49, wherein a projection areaof the portion of the image transfer system that projects the patternonto the substrate has a polygonal shape.
 56. The method according toclaim 49, wherein the imaging characteristic adjusting mechanismincludes a light transmissive optical member.
 57. The method accordingto claim 73, wherein the adjusting step adjusts a magnification of theportion of the image transfer system that projects the pattern onto thesubstrate.
 58. The method according to claim 49, wherein the adjustingstep adjusts a size of the pattern formed on the substrate by theportion of the image transfer system that projects the pattern onto thesubstrate.
 59. The method according to claim 49, wherein the adjustingstep adjusts a location where the pattern is formed on the substrate bythe portion of the image transfer system that projects the pattern ontothe substrate.
 60. A substrate on which an image has been exposedutilizing the method of claim
 49. 61. An exposure apparatus for exposinga pattern of a mask onto a substrate, comprising: image transferringmeans for transferring the pattern of the mask onto the substrate whilemoving the mask and the substrate synchronously during projection of thepattern onto the substrate such that portions of the pattern overlapeach other; imaging characteristic adjusting means disposed in a spacebetween the mask and the substrate, to adjust imaging characteristics ofa portion of the image transferring means that projects the pattern ontothe substrate; and exposing means for exposing the pattern during thesynchronous movement of the mask and the substrate by the imagetransferring means.